Hot carrier effects on analog performance of N- and P-MOSFET's withoxynitride gate dielectrics |
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Authors: | Joshi AB Dim-Lee Kwong |
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Affiliation: | Microelectron. Res. Center, Texas Univ., Austin, TX; |
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Abstract: | In this paper we report the impact of hot-carrier stress on analog performance of n- and p-MOSFET's with conventional oxide, NH3-nitrided oxide (RTN) and reoxidized nitrided oxide (RTN/RTO) as gate dielectrics. Changes due to hot-carrier stress in crucial analog parameters viz., drain output resistance, voltage gain, and input offset voltage of a source coupled differential MOSFET pair are investigated. Results show that RTN/RTO gate dielectrics suppress degradation of analog parameters in n-MOSFET's but increase it slightly in p-MOSFET's, as compared to conventional oxide MOSFET's |
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