RF magnetron sputtered aluminium oxide coatings on iridium |
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Authors: | K. Mumtaz J. Echigoya H. Enoki T. Hirai Y. Shindo |
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Affiliation: | (1) Department of Materials Processing, Faculty of Engineering, Tohoku University, 980 Sendai, Japan;(2) Institute for Materials Research, Tohoku University, 980 Sendai, Japan |
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Abstract: | The effects of process parameters on the microstructural morphology of aluminium oxide (Al2O3) coatings on Ir have been studied. Al2O3 coatings were deposited on Ir-coated isotropic graphite (IG) substrates at substrate temperatures of room temperature (RT)-1073 K, RF power of 200–600 W in an Ar, or Ar+1–10% O2, sputtering gas atmosphere by RF magnetron sputtering. Al2O3 coatings which were deposited at high substrate temperatures and high RF powers in an Ar, or an Ar+O2, sputtering gas atmosphere were found to contain a dense, fine columnar structure with a -Al2O3 phase, low Ar content and a relatively high hardness value of ca. 1050 Hv. Furthermore, high resolution transmission electron microscopy (HRTEM) results revealed the epitaxial growth of Al2O3 coatings on Ir-coated IG substrate. It was found that the interface between Al2O3 and Ir coatings was sharp and Al2O3 coatings remained intact with the Ir-coated IG substrate. |
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