Silicon Detectors for Low Energy Particle Detection |
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| Authors: | Tindall C.S. Palaio N.P. Ludewigt B.A. Holland S.E. Larson D.E. Curtis D.W. McBride S.E. Moreau T. Lin R.P. Angelopoulos V. |
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| Affiliation: | Lawrence Berkeley Nat. Lab., Berkeley, CA; |
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| Abstract: | Silicon detectors with very thin entrance contacts have been fabricated for use in the IMPACT SupraThermal Electron (STE) instrument on the STEREO mission and for the Solid State Telescopes on the THEMIS mission. The silicon diode detectors were fabricated using a 200 Aring thick phosphorous doped polysilicon layer that formed the thin entrance window. A 200 Aring thick aluminum layer was deposited on top of the polysilicon in order to reduce their response to stray light. Energy loss in the entrance contact was about 350 eV for electrons and about 2.3 keV for protons. The highest detector yield was obtained using a process in which the thick polysilicon gettering layer was removed by chemical etching rather than chemical mechanical polishing. |
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