Accurate determination of the band-offset of a quantum semiconductor structure from its capacitance-voltage profile: Application to an InP/Ga0.47In0.53As/InP single quantum well |
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| Authors: | C. Guillot M. Dugay F. Barbarin V. Soulière P. Abraham Y. Monteil |
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| Affiliation: | (1) Laboratoire des Sciences et Matèriaux pour l’Electronique, et d’Automatique, URA 1793 du CNRS, Université Blaise Pascal, Clermont-ferrand II, 63177 Aubière Cedex, France;(2) Laboratoire de Physicochimie Minérale, URA 116 du CNRS, Université Claude Bernard, 69622 Villeurbanne Cedex, France |
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| Abstract: | We discuss the possible analysis of an electron distribution obtained by capacitance-voltage profiling for the determination of the conduction band offset of a single quantum well. We show that, for this method which requires only relatively light experimental equipment, a nonconsuming computational time interpretation can be set up within a quite satisfactory degree of accuracy. As an application, we report the study of a lattice matched InP/Ga0.47In0.53As/InP quantum well for which we get ΔEc = (200±10) meV, in good agreement with other measurements upon this system. |
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| Keywords: | Capacitance-voltage (C-V) profiling conduction band offset Ga0.47In0.53As/InP quantum well |
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