| 高压LDMOS I—V特性宏模型的建立 |
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| 引用本文： | 吴秀龙 陈军宁 柯导明 汪洋. 高压LDMOS I—V特性宏模型的建立[J]. 微电子学与计算机, 2007, 24(8): 11-13 |
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| 作者姓名： | 吴秀龙 陈军宁 柯导明 汪洋 |
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| 作者单位： | 安徽大学电子科学与技术学院 安徽合肥230039 |
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| 基金项目： | 国家自然科学基金项目(60576066) |
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| 摘 要： | 目前LDMOS已经广泛应用于功率集成电路和微波集成电路中,建立LDMOS的SPICE等效电路变得很重要。以往的模型都是将LDMOS分为线性区和饱和区两段来分析,公式复杂而且计算量大。因此在数值模拟的基础上提出了全导通区域的伏安特性方程,建立了LDMOSI-V特性的宏模型。该模型的特点是参数少,易于提取,得到的SPICE等效电路简单,仿真容易收敛。
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| 关 键 词： | 横向双扩散MOS管 宏模型 等效电路 |
| 文章编号： | 1000-7180（2007）08-0011-03 |
| 修稿时间： | 2006-11-23 |
Creation of the I-V Characteristic Macromodel for High Voltage LDMOS |
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| WU Xiu-long, CHEN Jun-ning, KE Dao-ming, WANG Yang. Creation of the I-V Characteristic Macromodel for High Voltage LDMOS[J]. Microelectronics & Computer, 2007, 24(8): 11-13 |
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| Authors: | WU Xiu-long CHEN Jun-ning KE Dao-ming WANG Yang |
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| Affiliation: | School of Electric Science and Technology ,Anhui University, Hefei 230039, China |
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| Abstract: | Lateral double-diffused MOSFET(LDMOS) is widely used in power integrated circuits and microwave integrated circuits. So creating equivalent circuit of LDMOS is becoming more important. The previous models divided the on-state region of LDMOS into two parts,linear region and saturation region. The formulas and equivalent circuits are very complicated. This paper presents an I-V equation that is available in the whole on-state region by numerical simulation,and creates the I-V Characteristic Macromodel. The model contains fewer parameters easily extracted. Then we obtain a simpler equivalent circuit. Convergence becomes easier when using this equivalent circuit to simulate power integrated circuits. |
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| Keywords: | LDMOS macromodel equivalent circuit |
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