High-power external-cavity AlGaAs/GaAs/InGaAs quantum-dimensional heterolasers (λ = 1.06 μm)

Use of an external cavity with a grating ensures effective narrowing of the linewidth (～0.35 nm) of a high-power multimode semiconductor laser with a broad (100 μm) stripe contact. An output power of up to 550 mW has been reached with experimental external-grating-cavity laser diodes. It is demonstrated that a 3-mm-long multimode laser diode based on a quantum-dimensional AlGaAs/GaAs/InGaAs heterostructure (λ = 1.06 μm) can be used with a directly pumped PPLN crystal waveguide to obtain second-harmonic radiation with λ = 0.532 μm.