| 基于GaAs电感模型的微波功率放大器 |
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| 引用本文： | 阴亚芳,张 虹,张 博,李迎春.基于GaAs电感模型的微波功率放大器[J].西安邮电学院学报,2014(2):94-97. |
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| 作者姓名： | 阴亚芳 张 虹 张 博 李迎春 |
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| 作者单位： | [1]西安邮电大学电子工程学院,陕西西安710121; [2]西安通信学院基础部,陕西西安710065 |
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| 摘 要： | 基于0.15μm砷化镓(GaAs)工艺建立一种电感模型,并用高频结构模拟器(High Frequency Structure Simulator,HFSS)仿真验证,并在此基础上设计一种微波功率放大器,并用高级系统设计软件(Advanced Design System,ADS)进行仿真。仿真结果显示在812GHz频率范围内,饱和输出功率大于21.9dBm,1dB压缩点输出功率大于20dBm,功率增益大于26dB,功率附加效率大于34%,稳定系数大于1。
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| 关 键 词： | 微波功率放大器 GaAs基底 电感模型 共源共栅结构 |
Microwave power amplifier design based on GaAs inductance model |
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| Affiliation: | YIN Yafang, ZHANG Hong, ZHANG Bo, LI Yingchun (1. School of Electronic Engineering, Xi＇ an University of Posts and Telecommunications, Xi＇an 710121, China; 2. Department of basis, Xi＇an Communication Institute, Xi＇an 710065, China) |
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| Abstract: | In this paper an inductor model is built based on 0.15μm GaAs technology and its accuracy is tested by HFSS.8～12GHz microwave power amplifiers with ADS simulation are further designed.Simulation results show that within the frequency range of 8～12GHz the saturated output power is greater than 21.9dBm,1dB compression point output power greater than 20 dBm,the power gain better than 26dB,power added efficiency more than 34%and the stability factor greater than 1. |
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| Keywords: | microwave power amplifier GaAs substrate inductor model cascode topology |
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