Vertical scaling of 0.25-/spl mu/m emitter InP/InGaAs single heterojunction bipolar transistors with f/sub T/ of 452 GHz |
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| Authors: | Hafez W Jie-Wei Lai Feng M |
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| Affiliation: | Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA; |
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| Abstract: | Vertical scaling of the epitaxial structure has allowed submicron InP/InGaAs-based single heterojunction bipolar transistors (SHBTs) to achieve record high-frequency performance. The 0.25/spl times/16 /spl mu/m/sup 2/ transistors, featuring a 25-nm base and a 100-nm collector, display current gain cut-off frequencies f/sub T/ of 452 GHz. The devices operate at current densities above 1000 kA/cm/sup 2/ and have BV/sub CEO/ breakdowns of 2.1 V. A detailed analysis of device radio frequency (RF) parameters, and delay components with respect to scaling of the collector thickness is presented. |
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