| 磁控溅射碳化硅薄膜生长的热力学讨论 |
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| 引用本文： | 史兴建,姚合宝,贺庆丽,王文秀,汪颖梅,何大韧.磁控溅射碳化硅薄膜生长的热力学讨论[J].功能材料与器件学报,2001,7(3):273-276. |
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| 作者姓名： | 史兴建 姚合宝 贺庆丽 王文秀 汪颖梅 何大韧 |
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| 作者单位： | 1. 扬州大学复杂性科学研究中心,
2. 西北大学物理系, |
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| 基金项目： | Natural Science
Foundation of Shanxi Province; China State Key Projects of Basic Research (G1999064509). |
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| 摘 要： | 提出一个用磁控溅射制备碳化硅薄膜的简化热力学模型。首先选出构成β-C3N4，P-C3N4或-（C2N2）n-的最可能表面反应，然后通过求解这个热力学模型计算了生长参量空间中不同类型薄膜淀积区域的分界线。这些结果与一些实验结果很好地符合。
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| 关 键 词： | 磁控溅射 热力学模型 碳化硅薄膜 薄膜生长 |
| 文章编号： | 1007－4252(2001)03－0273－04 |
| 修稿时间： | 2000年10月18 |
Thermodynamic discussion on the growth of carbon nitride film by magnetron sputtering |
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| SHI Xing-jian,YAO He-bao,HE Qing,WANG Wen-xiu,WANG Ying-Mei,HE Da-ren.Thermodynamic discussion on the growth of carbon nitride film by magnetron sputtering[J].Journal of Functional Materials and Devices,2001,7(3):273-276. |
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| Authors: | SHI Xing-jian YAO He-bao HE Qing WANG Wen-xiu WANG Ying-Mei HE Da-ren |
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| Abstract: | A simple thermodynamic model for fabricating carbon nitride film via magnetron sputtering
is suggested. Firstly the most possible surface reactions synthesizing β －C3N4, P－C3N4 or －(C2N2)n－
are selected. Then by solving the thermodynamic model, the partition lines in the growth parameter
space are calculated. These lines show the regions where different kinds of films can be deposited.
The results are in good agreement with several experimental data. |
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