| 直流、射频磁控溅射制备钌薄膜的微观结构及电学性能分析 |
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| 引用本文： | 沈月,张以棚,许彦亭,巢云秀,唐可,王传军,闻明. 直流、射频磁控溅射制备钌薄膜的微观结构及电学性能分析[J]. 贵金属, 2024, 0(1): 1-9, 14 |
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| 作者姓名： | 沈月 张以棚 许彦亭 巢云秀 唐可 王传军 闻明 |
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| 作者单位： | 云南贵金属实验室有限公司，稀贵金属综合利用新技术国家重点实验室，昆明 650106;云南省林业调查规划院，昆明 650051 |
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| 基金项目： | 云南贵金属实验室科技计划重大科技专项(YPML-2023050207)；云南省科技计划基础研究专项(202201AT070249)；云南省基础研究计划青年项目(2019FD140)；云南省重大科技专项(202102AB080008-4)；云南贵金属实验室科技计划关键技术专项(YPML-2022050216)；云南省科技厅科技人才和平台计划(202205AD160052)；云南省张广平专家工作站(202305AF150171) |
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| 摘 要： | 为了探索直流和射频磁控溅射制备钌薄膜的微观结构及性能差异，进而指导薄膜制备工艺优化。采用直流和射频磁控溅射法在SiO2/Si(100)衬底上沉积不同时间和温度的钌薄膜；通过高分辨场发射扫描电镜、X射线衍射仪、原子力显微镜、四探针等方法研究不同溅射电源下制备的钌薄膜的微观结构和电学性能。结果表明，在相同溅射条件下，DC-Ru薄膜的结晶性优于RF-Ru薄膜；其厚度大于RF-Ru薄膜，满足tDC≈2tRF；其沉积速率高于RF-Ru薄膜，满足vDC≈2vRF。然而，其电阻率却高于RF-Ru薄膜，这主要得益于RF-Ru薄膜的致密度较高，从而降低了电子对缺陷的散射效应。
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| 关 键 词： | 直流磁控溅射；射频磁控溅射；钌薄膜；微观结构；电阻率 |
| 收稿时间： | 2023-03-09 |
Microstructure and electrical properties of Ru films prepared by DC and RF magnetron sputtering |
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| SHEN Yue,ZHANG Yipeng,XU Yanting,CHAO Yunxiu,TANG Ke,WANG Chuanjun,WEN Ming. Microstructure and electrical properties of Ru films prepared by DC and RF magnetron sputtering[J]. Precious Metals, 2024, 0(1): 1-9, 14 |
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| Authors: | SHEN Yue ZHANG Yipeng XU Yanting CHAO Yunxiu TANG Ke WANG Chuanjun WEN Ming |
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| Affiliation: | Yunnan Precious Metals Laboratory Co.Ltd., State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metals, Kunming 650106, China;Yunnan Institute of Forest Inventory and Planning, Kunming 650051, China |
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| Abstract: | Ru films were deposited on SiO2/Si(100) by DC or RF magnetron sputtering at different substrate temperatures for the different deposition times. The microstructure and electrical properties of Ru films obtained under two sputtering power sources were studied by using high resolution field emission scanning electron microscope, X-ray diffractometer, atomic force microscope, four probe and so on. The results showed that the crystallization of DC-Ru films was better than that of RF-Ru films under the same sputtering conditions. Its thickness was greater than that of RF-Ru films, satisfying tDC ≈ 2tRF. With respect to the deposition rate, DC-powered deposition was faster than RF-powered one, meeting vDC ≈ 2vRF. However, DC-Ru films displayed greater resistivity than DC-Ru films, mainly due to the high density of RF-Ru films. High density is known to reduce the scattering effect of electrons on defects. |
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| Keywords: | DC magnetron sputtering RF magnetron sputtering Ru films microstructure resistivity |
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