| 基于SDB技术的新结构PT型IGBT器件研制 |
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| 引用本文： | 何进,王新,陈星弼.基于SDB技术的新结构PT型IGBT器件研制[J].半导体学报,2000,21(9):877-881. |
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| 作者姓名： | 何进 王新 陈星弼 |
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| 作者单位： | 电子科技大学微电子所!成都610054 |
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| 基金项目： | 国家自然科学基金资助项目(69776041)[Project Supported by National Natural Science Foundation of China Under Grant No.69776041]. |
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| 摘 要： | 报道了基于 SDB技术的新结构穿通 ( PT)型 IGBT器件的研制 .运用 SDB技术 ,实现了PT型 IGBT器件的 N+ 缓冲层的优化设计 ,也形成了 IGBT器件的正斜角终端结构 .研制出IGBT器件有较好的电击穿特性和关断特性 .
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| 关 键 词： | IGBT 穿通 优化设计 硅片直接键合 |
| 文章编号： | 0253-4177(2000)09-0877-05 |
| 修稿时间： | 1999-12-18 |
Preparation of PT-IGBT with New Structure Based on SDB |
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| HE Jin,WANG Xin and CHEN Xing\|bi.Preparation of PT-IGBT with New Structure Based on SDB[J].Chinese Journal of Semiconductors,2000,21(9):877-881. |
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| Authors: | HE Jin WANG Xin and CHEN Xing\|bi |
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| Affiliation: | HE Jin
,WANG Xin
,CHEN Xing-bi
(Institute of Microelectronics, University of Electronic Science and Technology of China, Chengdu 610054, China) |
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| Abstract: | Preparation of PT\|IGBT with the new positiv e bevel structure is investigated, based on the Silicon Wafer Direct Bonding(SDB) technology. Utilizing the SDB te chnology, it is very convenient to optimize t he N + buffer layer and to obtain the positive bevel terminal structure of I GBT. The experimental results show that the SDB technolog y is very useful in the development of new generation of IGBT devices. |
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| Keywords: | IGBT punch-through optimization design si licon wafer direct bonding(SDB) |
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