Preparation of ferroelectric Pb(Zr0.52 Ti0.48)O3 thin films by sol-gel processing |
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Authors: | Kyung Won Seo Sung Hyun Cho Seung Ho Lee |
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Affiliation: | (1) School of Chemical Engineering & Biotechnology, Ajou Univ., 442-749 Suwon, Korea;(2) Korea Institute of Ceramic Engineering and Technology, 153-023 Seoul, Korea |
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Abstract: | Ferroelectric Pb(Zr0.52 Ti0.48)O3 thin films were prepared by sol-gel processing on the Pt/Ti/SiO2/Si(100) substrates. Effects of the concentration (0.2–0.8 M) of the starting solution (Pb/Zr/Ti= 1.1/0.52/0.48) and the sintering
temperature (500–700 ‡C) on crystallinity, microstructure and electrical properties of PZT thin films were investigated. For
the thin film prepared at 0.4 M starting solution, the highest crystallinity appeared at a sintering temperature of 650 ‡C.
The average grain size of the PZT thin films was about 0.17 Μm. The film thickness was about 0.2 Μm. The relative dielectric
constant and the dissipation factor of the film measured at 1 kHz were about 750 and 4.3%, respectively. The remnant polarization
(Pr) and coercive field (Ec) of the film measured at the applied voltage of 5 V were about 49 ΜC/cm2 and 134 kV/cm, respectively. |
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Keywords: | Ferroelectric Thin Films Sol-Gel Processing PZT Perovskite Phase Relative Dielectric Constant Dissipation Factor |
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