| Corrosion electrochemical mechanism ofchemical mechanical polishing of copper in K3Fe（CN）6 solution |
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| 引用本文： | 何捍卫,胡岳华,黄可龙.Corrosion electrochemical mechanism ofchemical mechanical polishing of copper in K3Fe（CN）6 solution[J].中国有色金属学会会刊,2002,12(1):178-182. |
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| 作者姓名： | 何捍卫 胡岳华 黄可龙 |
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| 作者单位： | 1. College of Chemistry and Chemical Engineering，Central South University，Changsha 410083，China; 2. Department of Mineral Engineering，Central South University，Changsha 410083，China |
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| 摘 要： | 1 ＩＮＴＲＯＤＵＣＴＩＯＮＣｈｅｍｉｃａｌ ｍｅｃｈａｎｉｃａｌ ｐｏｌｉｓｈｉｎｇ (ＣＭＰ )ｉｓｔｈｅｍｏｓｔｉｍｐｏｒｔａｎｔｇｌｏｂａｌｐｌａｎａｒｉｚａｔｉｏｎｔｅｃｈｎｏｌｏｇｙａｔｐｒｅ ｓｅｎｔ.Ｓｐｅｃｉａｌｌｙｔｏｐｏｌｉｓｈｉｎｇｏｆｍｅ
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| 关 键 词： | 铜 抛光率 腐蚀电流密度 电化学机制 K3Fe（CN）6溶液 |
Corrosion electrochemical mechanism of chemical mechanical polishing of copper in K3Fe(CN)6 solution |
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| HE Han wei,HU Yue hua,HUANG Ke long.Corrosion electrochemical mechanism of chemical mechanical polishing of copper in K3Fe(CN)6 solution[J].Transactions of Nonferrous Metals Society of China,2002,12(1):178-182. |
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| Authors: | HE Han wei HU Yue hua HUANG Ke long |
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| Abstract: | Polarization curves of copper were measured in NH3*H2O media containing K3Fe(CN)6. Components of passive film were analyzed by XPS. Relation of polishing rate with corrosion current density was investigated during CMP. Copper can be passivated in the slurry and main component of passive film is Cu4Fe(CN)6. Relation of polishing rate with corrosion current density is linear direct ratio and expressed as R=KJcorr during CMP. Coefficient K varies with different slurry systems but is constant under experimental conditions, which does not vary with NH3*H2O, K3Fe(CN)6, γ-Al2O3 concentrations, polishing pressures and rotative rate in a slurry system during CMP. |
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| Keywords: | copper polishing rate corrosion current density |
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