| VDMOS的导通电阻模型 |
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| 引用本文： | 姜艳, 陈龙, 沈克强,. VDMOS的导通电阻模型[J]. 电子器件, 2008, 31(2): 537-541 |
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| 作者姓名： | 姜艳 陈龙 沈克强 |
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| 作者单位： | 东南大学,MEMS教育部重点实验室,南京,210096;东南大学,MEMS教育部重点实验室,南京,210096;东南大学,MEMS教育部重点实验室,南京,210096 |
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| 摘 要： | 导通电阻是衡量VDMOS器件性能的重要参数之一,是高开关效率,低功耗VDMOS器件的主要设计指标.从VDMOS器件物理结构出发,利用半导体基本物理方程,如泊松方程,提出了一种建立精确导通电阻模型的方法.采用弧形边界对颈区电阻进行建模;通过考察载流子运动规律,求解泊松方程,结合器件结构与边界条件建立外延层模型.该方法物理概念清晰,规避了经验参数,考虑了器件结构参数对导通电阻的影响.该模型与MEDICI模拟结果相比较有良好的一致性.
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| 关 键 词： | 导通电阻 VDMOS 模型 MEDICI |
| 文章编号： | 1005-9490(2008)02-0537-05 |
| 修稿时间： | 2007-05-10 |
On-Resistance Model for VDMOS |
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| JIANG Yan,CHEN Long,SHEN Ke-qi. On-Resistance Model for VDMOS[J]. Journal of Electron Devices, 2008, 31(2): 537-541 |
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| Authors: | JIANG Yan CHEN Long SHEN Ke-qi |
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| Affiliation: | JIANG Yan,CHEN Long,SHEN Ke-qiang(Key Laboratory of MEMS of Ministry of Education,Southeast University,Nanjing 210096,China) |
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| Abstract: | On-resistance is one of important parameters for VDMOS,and it is an important index to improve on-off efficiency and reduce power waste of VDMOS.By using basic physical equation of semiconductor,such as Poisson equation,a new method to establish an exact on-resistance model based on the physical structure of VDMOS device was given.Neck block is modeled with arc boundary.By reviewing carrier moving law,solving Poisson equations,and uniting device structure and boundary conditions,epitaxy block is modeled.Thi... |
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| Keywords: | on-resistance VDMOS model MEDICI |
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