Low-Temperature photoluminescence of SiGe/Si disordered multiple quantum wells and quantum well wires

Low-temperature photoluminescence from disordered SiGe/Si quantum wells and quantum wires made from periodic quantum wells by electron beam lithography and reactive ion etching has been measured. No enhancement in luminescence is seen, compared to that in periodic quantum wells, in the disordered wells or quantum wires. New transitions are observed in the wire luminescence, including a possible no-phonon transition exhibiting a 32 meV blue shift compared to the same transition in the wells.