| 金刚石半导体研究进展 |
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| 引用本文： | 熊礼威,汪建华,满卫东,刘长林,翁俊. 金刚石半导体研究进展[J]. 材料导报, 2010, 24(7) |
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| 作者姓名： | 熊礼威 汪建华 满卫东 刘长林 翁俊 |
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| 作者单位： | 中国科学院等离子体物理研究所,合肥,230031;武汉工程大学湖北省等离子体化学与新材料重点实验室,武汉430073;武汉工程大学湖北省等离子体化学与新材料重点实验室,武汉,430073 |
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| 摘 要： | 金刚石具有一系列优异的物理化学性能,特别是独特的电学和热学性能,使其在半导体领域具有极佳的应用前景.通过详细评述金刚石的各种性能,以及与其他半导体材料的性能比较,提出了金刚石在半导体器件应用领域的优势.详细介绍了金刚石半导体掺杂以及金刚石半导体器件的种类和应用,并在此基础上展望了金刚石在半导体领域的应用.
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| 关 键 词： | 金刚石 半导体 掺杂 |
Progress in Diamond Semiconductor |
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| Abstract: | Diamond is a perfect material with tremendous potential in the semiconductor field due to its extreme physical and chemical properties, especially its unique electronic and thermal properties. The advantages of diamond are shown by reviewing the properties of diamond and comparing it with other semiconductors. The doping of diamond, the classification of diamond semiconductor device and their applications are introduced in detail. And finally,the application potentials of diamond semiconductor are prospected based on the discussion. |
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| Keywords: | diamond semiconductor doping |
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