A 900-MHz fully integrated SOI power amplifier for single-chipwireless transceiver applications |
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| Authors: | Tan Y Kumar M Sin JKO Shi L Lau J |
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| Affiliation: | Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol.; |
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| Abstract: | This paper presents a silicon-on-insulator (SOI) fully integrated RF power amplifier for single-chip wireless transceiver applications. The integrated power amplifier (IPA) operates at 900 MHz, and is designed and fabricated using a 1.5-μm SOI LDMOS/CMOS/BJT technology. This technology is suitable for the complete integration of the front-end circuits with the baseband circuits for low-cost low-power high-volume production of single-chip transceivers. The IPA is a two-stage Class E power amplifier. It is fabricated along with the on-chip input and output matching networks. Thus, no external components are needed. At 900 MHz and with a 5-V supply, the power amplifier delivers 23-dBm output power to a 50-Ω load with 16-dB gain and 49% power-added efficiency |
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