Low-temperature CV dispersion in MOS devices |
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| Authors: | Viswanathan C.R. Divakaruni R. Kizziar J. |
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| Affiliation: | Dept. of Electr. Eng., California Univ., Los Angeles, CA; |
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| Abstract: | A study is reported of the dispersion seen in the accumulation and depletion regions, of the C-V curve in n-channel MOS devices in the temperature range 30-45 K. It is concluded that the dispersion observed in these experiments is caused by time-constant effects, due to the substrate resistance and not caused by dopant atom emission time constant effects. From the measured admittance as a function of temperature and frequency, the acceptor energy level is determined to within ±0.4 meV |
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