| 控制铅挥发制备钛酸锶铅半导体陶瓷 |
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| 引用本文： | 赵景畅,吴兴惠,李龙土.控制铅挥发制备钛酸锶铅半导体陶瓷[J].电子元件与材料,2004,23(7):19-21. |
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| 作者姓名： | 赵景畅 吴兴惠 李龙土 |
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| 作者单位： | 云南大学材料科学与工程系,云南,昆明,650091;清华大学材料科学与工程系,北京,100084 |
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| 基金项目： | 云南省自然科学基金资助项目(2000E0018M) |
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| 摘 要： | 在 Y 掺杂的钛酸锶铅中,分别添加过量 PbO、SiO_2、ZrO_2制备之半导体陶瓷样品,在居里点(约 120℃)以上具有强的 PTC 效应,升阻比接近 5 个数量级。其中,SiO_2或 ZrO_2增强了居里点以下的 NTC 效应,降阻比可达 1个数量级;而少量 PbO 则降低了陶瓷的室温电阻率和 NTC 效应。通过热处理可以使热敏特性由 PTC 型向 NTC-PTC复合型转变,表明 NTC 效应与铅含量变化密切相关,控制铅挥发能获得不同热敏特性的钛酸锶铅半导体陶瓷。
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| 关 键 词： | 钛酸锶铅半导瓷 PTC效应 NTC效应 控制Pb挥发 |
| 文章编号： | 1001-2028(2004)07-0019-03 |
Semiconductor Ceramics of (Sr, Pb)TiO3 :Preparation and Properties |
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| ZHAO Jing-chang,WU Xing-hui,LI Long-tu.Semiconductor Ceramics of (Sr, Pb)TiO3 :Preparation and Properties[J].Electronic Components & Materials,2004,23(7):19-21. |
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| Authors: | ZHAO Jing-chang WU Xing-hui LI Long-tu |
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| Affiliation: | ZHAO Jing-chang1,WU Xing-hui1,LI Long-tu2 |
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| Abstract: | Y-doped Sr_(0.5)Pb_(0.5)TiO_3 semiconductor ceramics were prepared by adding the excess PbO, SiO_2 and ZrO_2, respectively. The ceramics sintered exhibit the strong PTC effect and the jump range is of the order of five when temperature is >tC. SiO_2 or ZrO_2-added samples have obvious NTC-PTC composite effects. Small addition of PbO helps to decrease ρ25 and the NTC effect. Transformation from PTC to NTC-PTC effects was observed in 4 mol% PbO-doped sample after heating-treatment at 950℃. The results indicate that the NTC effect is related to the variation of Pb amount. Semiconductor ceramics of (Sr, Pb)TiO3 with different thermo-sensitive property were obtained by controlling PbO loss. |
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| Keywords: | semiconductor ceramics of (Sr Pb)TiO_3 PTC effect NTC effect controlling Pb loss |
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