| 基于新型启动电路的高电源抑制带隙基准源 |
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| 引用本文： | 翁强,张云珠,吴建辉,张萌. 基于新型启动电路的高电源抑制带隙基准源[J]. 固体电子学研究与进展, 2008, 28(2): 289-293 |
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| 作者姓名： | 翁强 张云珠 吴建辉 张萌 |
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| 作者单位： | 东南大学国家,专用集成电路系统工程技术研究中心,南京,210096;东南大学国家,专用集成电路系统工程技术研究中心,南京,210096;东南大学国家,专用集成电路系统工程技术研究中心,南京,210096;东南大学国家,专用集成电路系统工程技术研究中心,南京,210096 |
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| 摘 要： | 设计了一种基于新型启动电路的高电源抑制(PSR)的带隙基准电压源。启动电路可以在300ns的时间内使电路进入工作状态,同时可在10ns的时间内完全关断电路。可控的启动电路增加了电路使用的灵活性。本基准电路基于新加坡Chartered0.25μmN阱CMOS工艺实现,已应用于射频调谐器当中。测试结果表明,基准电压源在低频段的电源抑制PSR≈123dB,高频段PSR>50dB,电路采用一阶温度补偿技术,在0～100℃的温度范围内输出基准电压的温度系数(TC)约为12ppm/℃。
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| 关 键 词： | 带隙基准电压源 电源抑制 一阶温度补偿 温度系数 |
Design of High Power Supply Rejection Bandgap Voltage Reference with Novel Startup Circuit |
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| WENG Qiang,ZHANG Yunzhu,WU Jianhui,ZHANG Meng. Design of High Power Supply Rejection Bandgap Voltage Reference with Novel Startup Circuit[J]. Research & Progress of Solid State Electronics, 2008, 28(2): 289-293 |
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| Authors: | WENG Qiang ZHANG Yunzhu WU Jianhui ZHANG Meng |
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| Affiliation: | WENG Qiang ZHANG Yunzhu WU Jianhui ZHANG Meng(National Asic System Engineering Research Center,Southeast University,Nanjing,210096,CHN) |
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| Abstract: | A bandgap voltage reference with novel startup circuit is presented in this paper.It has high power supply rejection:PSR>120 dB at low frequency and PSR>50 B at high frequency.The circuit can start up in 300 ns and can be shut down completely in 10 ns.Controllable startup circuit makes the voltage reference more flexible for use.First-order temperature compensation technology is adopted in this circuit.The temperature coefficient of the circuit is about 12 ppm/℃ between the range of 0～100℃.The proposed CMOS bandgap voltage reference has been implemented in Chartered 0.25 μm N-Well CMOS process and applied in RF receiver. |
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| Keywords: | bandgap voltage reference power supply rejection first-order temperature compensation temperature coefficient |
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