氮化SiO2中的电子陷阱和Fowler-Nordheim隧穿压力下陷阱中心的产生(英文)

Electron Traps in Nitrided SiO_2 and the Trap Center Generation Under Fowler-Nordheim Tunneling Stress

Electron trapping and trap center generation within thermally nitrided oxides are investigated using Fowler-Nordheim constant current stress and avalanche electron injection methods. The results show that electron traps created in the films during the nitridation increase with the nitridation time. The positive charges build up near the interface accompanied with the generation of the new electron trap centers in the films under Fowler-Nordheim tunneling stress. The generation mechanisms are proposed in this paper.