Low-temperature thermionic emission from nitrogen-doped nanocrystalline diamond films on n-type Si grown by MPCVD

Temperature-dependent emission current–voltage measurements were carried out for nitrogen (N)-doped nanocrystalline diamond (NCD) films grown on n-type Si substrates by microwave plasma-assisted chemical vapor deposition (MP-CVD). Low threshold temperature (~ 260 °C) and low threshold electric field (~ 5 × 10^− 5 V/µm) were observed. Both the temperature dependence and the electric field dependence have shown that the obtained emission current was based on electron thermionic emission from N-doped NCD films. We have also studied the relation between nitrogen concentration and the saturation emission current. The saturation current obtained was as high as 1.4 mA at 5.6 × 10^− 3 V/µm at 670 °C when the nitrogen concentration was 2.4 × 10²⁰ cm^− 3. Low value of effective work function (1.99 eV) and relatively high value of Richardson constant (~ 70) were estimated by well fitting to Richardson–Dushman equation. The results of smaller φ and larger A′ suggest that N-doped NCD has great possibility of being a highly efficient thermionic emitter material.