SnO2:F films synthesized by chemical vapour deposition technique using hydrofluoric acid as doping material |
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| Authors: | A K Saxena R Thangaraj S P Singh O P Agnihotri |
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| Affiliation: | (1) Physics Department, Indian Institute of Technology, 110 016 New Delhi, India |
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| Abstract: | Highly transparent and highly conducting films of SnO2:F were prepared by chemical vapour deposition technique. The films prepared at 350°C substrate temperature and 2·5 lit. min−1 flow rate of oxygen showed maximum figure of merit. The optimum doping concentration of fluorine was 1·02 wt%. The Hall experiment
showed that the films prepared at optimum conditions had high carrier concentration and high mobility. |
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| Keywords: | Thin films SnO2:F transparent conductors chemical vapour deposition |
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