SIMS characterization of HgCdTe and related II-VI compounds |
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Authors: | Jack Sheng Larry Wang Gayle E Lux |
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Affiliation: | (1) Charles Evans & Associates, 301 Chesapeake Dr., 94063 Redwood City, CA |
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Abstract: | The production of consistent high purity materials is critical for improvement in performance and sensitivity of II-VI photovoltaic
and photoconductive devices. Information regarding the energy band structure and impurity or defect levels present in the
material is essential to understand and enhance the performance of current detectors along with the development of future
novel devices. Secondary ion mass spectrometry (SIMS) is capable of providing information of purity, junction depths, dopant
distribution, and stoichiometry in the material. SIMS techniques can achieve high detection sensitivities in very small analytical
volumes and for a wide range of elements (almost the entire periodic table). SIMS analysis also provides unique capabilities
for localizing atomic distribution in two and three dimensions. Ion images can be obtained by registering the positions of
mass selected ions formed in the sputtering process. The combination of excellent detection sensitivity, high mass resolution,
depth profiling capability, and high resolution image acquisition on a wide spectrum of elements by a SIMS instrument is not
matched by any other instrumentation technique. |
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Keywords: | HgCdTe secondary ion mass spectroscopy (SIMS) SIMS detection limits SIMS imaging |
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