| 基于直流调制技术Pockels Cell高压纳秒级脉冲源研制 |
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| 引用本文： | 蒋顺利,郎佳红,冯德仁,丁凯.基于直流调制技术Pockels Cell高压纳秒级脉冲源研制[J].安徽工业大学学报,2014(2):173-176. |
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| 作者姓名： | 蒋顺利 郎佳红 冯德仁 丁凯 |
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| 作者单位： | 安徽工业大学电气与信息工程学院,安徽马鞍山243032 |
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| 基金项目： | 安徽省重大教研项目（2013ZDJY074） |
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| 摘 要： | 研制一种基于直流调制技术的高压纳秒级脉冲源,将其作为Pockels Cell前馈驱动电源。分析直流调制技术的原理,选用金属氧化物半导体场效应管(MOSFET)作为主调制开关,设计系统辅助电路。实验结果表明:输出的高压脉冲最高幅值可达800 V、脉冲前沿小于100 ns、高压抖动较小。该结果为更高脉冲重复频率、更快上升沿脉冲源的研制提供了借鉴。
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| 关 键 词： | Pockels Cell 直流调制技术 脉冲源 功率MOSFET |
Development of Pockels Cell Driving Pulse Generator Based on DC Modulation Technique |
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| JANG Shunli,LANG Jiahong,FENG Deren,DING Kai.Development of Pockels Cell Driving Pulse Generator Based on DC Modulation Technique[J].Journal of Anhui University of Technology,2014(2):173-176. |
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| Authors: | JANG Shunli LANG Jiahong FENG Deren DING Kai |
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| Affiliation: | (School of Electrical Engineering and Information, Anhui University of Technology, Ma＇anshan 243032, China) |
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| Abstract: | A high voltage pulse generator based on DC modulation technique was presented, which can be used as pockels cell driving source. The principles of DC modulation technique of system were analyzed. The metal-oxide semiconductor field effect transistor （MOSFET） was chosen as main modulation switch.The system auxiliary circuit was designed. Experimental results indicate that the highest amplitude of output pulse can be up to 800 V, its pulse front and jitter are less than 100 ns, and high ovltage shakes smaller. The results provide better references for pulse generator with higher repetitive rate and lower pulse front edge. |
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| Keywords: | Pockels Cell DC modulation technique pulse generator power MOSFET |
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