一种改进的用于SiGe HBT的焊盘模型参数提取技术

提出了一种适用于Si基器件的焊盘寄生参数的提取方法,并将此方法提取的焊盘寄生参数结果与用近似法提取的焊盘寄生参数结果的精度作了比较。比较结果表明,文中提出的线性拟合法精度较高。焊盘寄生参数提取并剥离后,对AMS 0.35μm BiCMOS工艺加工的SiGe HBT的小信号等效电路进行参数提取,其中,外部电阻用基极"过驱动电流"法提取,本征参数用分析法提取,将参数提取结果代入模型进行仿真,仿真得到的S参数在整个测试频率范围内均与测试结果吻合良好。

An Improved Approach for Determination of Pad Model Parameters for SiGe HBT

A new method for determining the pad parasitic elements of Si-based devices is presented.Comparison between the new method and approximation method shows that the parasitic elements of the pad extracted by linear fitting method presented in this paper is more accurate.Once the pad parameters are obtained,small-signal equivalent circuit parameters of SiGe HBT implemented with AMS 0.35μm BiCOMS technology are extracted.The extrinsic resistances are determined under"over drive I_B"bias condition,and the intrinsic elements are all calculated by using analytical method.Good agreement is achieved between simulated and measured results of the transistor over the test frequency range.