Al2O3掺量及氧气分压对直流磁控溅射法制备铝掺杂氧化锌薄膜性能的影响

制备了掺杂质量数为1％，2％，3％和4％Al2O3的ZnO靶材。用直流磁控溅射法在玻璃衬底上制备了ZnO；Al(ZAO)透明导电薄膜试样。用X射线衍射和扫描电镜分析了薄膜的物相及表面形貌。用四探针法测试了薄膜的电性能。用紫外-可见光谱仪测试了试样的可见光透过率。结果表明：溅射气氛中氧气的存在降低薄膜的电导率，对薄膜试样的可见光透过率影响不大；用含3％Al2O3的ZnO靶材制备的薄膜的电导率最高。讨论了氧气分压和Al2O3的掺杂量对ZAO薄膜的结构和性能的影响。

EFFECTS OF Al2O3 DOSAGES AND OXYGEN PARTIAL PRESSURE ON PROPERTIES OF ALUMINUM-DOPED ZINC OXIDE FILMS PREPARED BY DIRECT CURRENT MAGNETRON SPUTTERING

Using ZnO targets with various Al_2O_3 mass fractions of 1%, 2%, 3%,4%, aluminum-doped ZnO films (ZAO) were prepared by direct current magnetron sputtering on glass substrates at different Al_2O_3 dosages and different oxygen partial pressures. The phase structure and surface micrograph of the ZAO were analyzed by X-ray diffraction and scanning electron microscope. The resistance and the optical transmittance in a visible region were measured by the four-point technique and ultraviolet-visual absorption spectrometer at room temperature. Results show that the oxygen existed in sputtering gas increases the resistivity,but has little influence on transmittance. The lowest resistivity can be obtained using the ZnO targets with 3% Al_(2)O_(3 ) doped.