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掺杂MnZn功率铁氧体的电子显微研究
引用本文:王娇,包生祥,李世岚,吕德春,马丽丽.掺杂MnZn功率铁氧体的电子显微研究[J].磁性材料及器件,2009,40(2).
作者姓名:王娇  包生祥  李世岚  吕德春  马丽丽
作者单位:电子科技大学,电子薄膜与集成器件国家重点实验室,四川成都,610054
摘    要:采用扫描电子显微镜和X射线能谱仪对掺杂MnZn功率铁氧体断面进行了分析和表征.对比研究了各掺杂剂在微结构中的分布情况,并探论其在微结构形成过程中的作用及对电磁性能的影响.结果表明,掺杂剂在显微结构中的存在形式可分为四类:(1)掺杂剂进入晶格.其阳离子半径和电负性与Mn、Zn、Fe的离子半径相当,发生阳离子置换,如TiO2、CeO2等;(2)富集于晶界.掺杂剂阳离子半径较大,常偏析于晶界处,如CaO、Bi2O3等;(3)一部分进入晶格,一部分滞于晶界.如SnO2、V2O5、MoO3等;(4)掺杂剂与气孔伴生存在,偏聚于晶粒内部较浅的缩孔中,如Nb2O5、P2O5等.

关 键 词:MnZn铁氧体  掺杂  显微结构

Electron Microanalysis Study on Doped MnZn Power Ferrite
WANG Jiao,BAO Sheng-xiang,LI Shi-lan,LV De-chun,MA Li-li.Electron Microanalysis Study on Doped MnZn Power Ferrite[J].Journal of Magnetic Materials and Devices,2009,40(2).
Authors:WANG Jiao  BAO Sheng-xiang  LI Shi-lan  LV De-chun  MA Li-li
Affiliation:WANG Jiao,BAO Sheng-xiang,LI Shi-lan,LV De-chun,MA Li-li State Key Laboratory of Electronic Thin Films , Integrated Devices,University of Electronics Science , Technology of China,Chengdu 610054,China
Abstract:The microstructures of doped MnZn power ferrites were characterized by scanning electronic microscopy (SEM) and energy dispersive X-ray spectrometer (EDS). The typical distributions of the dopants in the microstructure were studied by comparison, and the effects of dopants on the microstructure and electromagnetic property was discussed. The results showed that the dopants could be classified to four different kinds according to their forms of microstructral existence. (1) Entering into the crystal lattice....
Keywords:MnZn ferrite  doping  microstructure  
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