| 退火对磁控溅射法制备半导体Mg2Si薄膜的影响 |
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| 引用本文： | 肖清泉,谢泉,陈茜,赵珂杰,余志强,沈向前.退火对磁控溅射法制备半导体Mg2Si薄膜的影响[J].半导体学报,2011,32(8):082002-5. |
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| 作者姓名： | 肖清泉 谢泉 陈茜 赵珂杰 余志强 沈向前 |
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| 作者单位： | 贵州大学,贵州大学,贵州大学,贵州大学,贵州大学,贵州大学 |
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| 摘 要： | 通过磁控溅射和氩气氛围退火，在Si(111)衬底上制备环境友好半导体Mg2Si薄膜，并采用XRD和SEM研究了退火对Mg2Si薄膜形成和微结构的影响。结果表明Mg2Si薄膜的质量取决于退火温度、退火时间和沉积的薄膜厚度。制备Mg2Si薄膜，400℃退火5h是最优退火条件。XRD和SEM结构表明Mg2Si是通过沉积的Mg和Si衬底原子的相互扩散形成的。退火减少薄膜缺陷，也影响薄膜的表明粗糙度。
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| 关 键 词： | 磁控溅射沉积 电影 扫描电子显微镜 硅（111） 薄膜合成 退火温度 微观结构 退火时间 |
| 收稿时间： | 3/30/2011 6:33:00 PM |
Annealing effects on the formation of semiconducting Mg2Si film using magnetron sputtering deposition |
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| Xiao Qingquan,Xie Quan,Chen Qian,Zhao Kejie,Yu Zhiqiang and Shen Xiangqian.Annealing effects on the formation of semiconducting Mg2Si film using magnetron sputtering deposition[J].Chinese Journal of Semiconductors,2011,32(8):082002-5. |
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| Authors: | Xiao Qingquan Xie Quan Chen Qian Zhao Kejie Yu Zhiqiang and Shen Xiangqian |
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| Affiliation: | Institute of Advanced Optoelectronic Materials and Technology, College of Science, Guizhou University, Guiyang 550025, China;Institute of Advanced Optoelectronic Materials and Technology, College of Science, Guizhou University, Guiyang 550025, China;Institute of Advanced Optoelectronic Materials and Technology, College of Science, Guizhou University, Guiyang 550025, China;Institute of Advanced Optoelectronic Materials and Technology, College of Science, Guizhou University, Guiyang 550025, China;Institute of Advanced Optoelectronic Materials and Technology, College of Science, Guizhou University, Guiyang 550025, China;Institute of Advanced Optoelectronic Materials and Technology, College of Science, Guizhou University, Guiyang 550025, China |
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| Abstract: | |
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| Keywords: | thin film magnetron sputtering annealing X-ray diffraction scanning electron microscopy |
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