Experimental Demonstration of Novel High-Voltage Epilayer RESURF GaN MOSFET |
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| Authors: | Weixiao Huang Chow TP Niiyama Y Nomura T Yoshida S |
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| Affiliation: | Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA; |
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| Abstract: | We report on the experimental demonstration of a novel n-channel GaN epilayer RESURF GaN MOSFET with good tradeoff between breakdown voltage and specific on-resistance for the first time. Device with 4-mum channel length and 16-mum RESURF length has breakdown voltage up to 730 V with specific on-resistance 34 mOmegamiddotcm2 (VG - VT = 20 V), best reported to date. |
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