| WLAN中带ESD保护的低噪声放大器设计 |
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| 引用本文： | 石春琦,马和良,张润曦,赖宗声. WLAN中带ESD保护的低噪声放大器设计[J]. 微电子学, 2010, 40(1) |
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| 作者姓名： | 石春琦 马和良 张润曦 赖宗声 |
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| 作者单位： | 华东师范大学,微电子电路与系统研究所,上海,200062 |
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| 基金项目： | 上海应用材料研究与发展基金资助项目(07SA04,09700713800);;纳光电教育工程中心(NPAI)资助项目;;上海重点学科建设项目(B411) |
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| 摘 要： | 介绍了一个基于IBM0.18μmCMOS工艺,用于无线局域网(WLAN)IEEE802.11a的带ESD保护电路的低噪声放大器(LNA)。通过分析电感负反馈共源共栅放大器的输入阻抗、增益和噪声系数,以及ESD保护电路对低噪声放大器性能的影响,对该5GHz低噪声放大器进行设计和优化。测试结果表明,当电源电压为1.8V时,消耗电流为6.5mA,增益达到10dB,输入匹配达到-18dB,噪声为4.29dB,线性度IIP3为4dBm。
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| 关 键 词： | 低噪声放大器 CMOS 无线局域网 静电放电 |
Design of CMOS LNA with ESD Protection for WLAN |
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| SHI Chunqi,MA Heliang,ZHANG Runxi,LAI Zongsheng. Design of CMOS LNA with ESD Protection for WLAN[J]. Microelectronics, 2010, 40(1) |
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| Authors: | SHI Chunqi MA Heliang ZHANG Runxi LAI Zongsheng |
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| Affiliation: | Institute of Microelectronic Circuit & System/a>;East China Normal University/a>;Shanghai 200062/a>;P.R.China |
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| Abstract: | A 1.8 V 5.2 GHz LNA with ESD protection for WLAN 802.11a was implemented in IBM 0.18 μm CMOS process. The LNA was optimized based on the analysis of input impedance, voltage gain and noise figure of cascode LNA with inductive degeneration. Effects of ESD protection on LNA performance were discussed. Test results showed that the LNA had a forward gain of 10 dB, a noise figure of 4.29 dB, an IIP3 of 4 dBm and an S11 of -18 dB, and the circuit dissipated 6.5 mA of current from 1.8 V supply. |
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| Keywords: | LNA CMOS WLAN ESD |
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