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溅射沉积AlN薄膜结构与基片种类的关系
引用本文:许小红,武海顺,张聪杰,金志浩.溅射沉积AlN薄膜结构与基片种类的关系[J].压电与声光,2000,22(4):256-258.
作者姓名:许小红  武海顺  张聪杰  金志浩
作者单位:1. 西安交通大学,材料学院,西安,710049;山西师范大学,化学系,临汾,041004
2. 山西师范大学,化学系,临汾,041004
3. 西安交通大学,材料学院,西安,710049
基金项目:国家自然科学基金!(29741004),山西省自然科学基金联合资助项目
摘    要:采用高真空直流磁控反应溅射成功地在5种基片上制备出多晶择优取向的AIN薄膜。结果表明,5种基片均可生长(100)面掺优取向的AIN薄膜,并且具有良好的纵向组成均匀性,表面粗造度小,晶粒均匀致密。在金属电极和Si片上沉积的AIN薄膜结晶度、取向性、衍射强度差别较小,两者的结构均优于在盖玻片上的沉积的AIN薄膜。

关 键 词:AIN薄膜  基片  磁控反应溅射
修稿时间:2000-01-07

Studies on the Effects of the Different Substrates on the Structures of AlN Thin Films
XU Xiao-hong,WU Hai-shun,ZHANG Cong-jie,JIN Zhi-hao.Studies on the Effects of the Different Substrates on the Structures of AlN Thin Films[J].Piezoelectrics & Acoustooptics,2000,22(4):256-258.
Authors:XU Xiao-hong  WU Hai-shun  ZHANG Cong-jie  JIN Zhi-hao
Abstract:Aluminum  nitride thin films w ith(100)orientation have been successful ly deposited on five kinds of substrates   using DC reactive magnetron sputtering.T he films have been characterized by X-ra y diffraction,Auger electron spectrosco ps(AES)and atomic force microscope(AFM). The results show that these AlN thin fil ms were homogeneous in vertical section, very low roughness for their surface,and had a preferr ed   orientation with(100).The diffraction i ntensity of preferred orientation for Al N films deposited on Si substrates and A l/Si(Al/glass)substrates were generally  better than that of on glass.
Keywords:aluminum ni tride thin films  substrates  structure  magnetron  reactive sputtering
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