Influence of Crystal Structure on the Fatigue Properties of Pb1−xLax(Zry', Tiz)O3 Thin Films Prepared by Pulsed-Laser Deposition Technique |
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| Authors: | Wen-Jen Lin Tseung-Yuen Tseng Sheuan-Perng Lin Shun-Lih Tu Hong Chang Sheng-Jenn Yang I-Nan Lin |
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| Affiliation: | Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, 300 Taiwan, Republic of China;Materials Research and Development Center, Chung Shan Institute of Science and Technology, Taiwan, Republic of China;Materials Science Center, National Tsing-Hua University, 300 Taiwan, Republic of China |
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| Abstract: | Lead lanthanum zirconate titanate (Pb1− x La x (Zr y ,Ti z )O3, PLZT) films containing 00 l ] preferentially oriented grains were produced successfully on YBa2Cu3O7− x -coated (YBCOcoated) SrTiO3 (STO) or YBCO/CeO2-coated silicon substrates; films containing randomly oriented grains were created on platinum-coated silicon substrates. The latter possessed significantly inferior ferroelectric properties, a fact ascribed to the presence of a paraelectric phase (TiO2) at the PLZT/platinum interface. On the other hand, the PLZT/YBCO/STO films exhibited better electrical properties than did the PLZT/YBCO/CeO2/Si films, and this phenomenon was attributed to better alignment of the grains in normal and in-plane orientations. In terms of fatigue properties, the 00l] textured films that were deposited on YBCO/CeO2/Si substrates possessed substantially superior polarization-switching-cycle endurance versus the randomly oriented films grown on Pt(Ti)/Si substrates. Moreover, the tetragonal films behaved much more satisfactorily than did the rhombohedral PLZT films. The ferroelectric parameters of tetragonal PLZT films showed no significant degradation up to 109 polarization switching cycles, whereas the remnant polarization and coercive force of the rhombohedral PLZT films had already degraded to 80% of their initial values after 108 cycles. |
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