The effect of annealing on residual stress and dislocation propagation in silicon slices with damaged layer induced by scribing |
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Authors: | H Kotake Shin Takasu |
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Affiliation: | (1) Toshiba Research and Development Centre, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, 210 Kawasaki, Japan |
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Abstract: | The effect of annealing on residual stress and dislocation propagation in silicon slices with a damaged layer induced by diamond scribing, laser scribing and diamond blade cutting was studied by infra-red photoelastic measurements and dislocation pit observations. Residual stress and dislocation propagation both showed clear annealing temperature dependence at temperatures above 500° C, although the residual stress was greatly reduced by a small degree of dislocation propagation. The experimental results can be explained using the stress recovery theory by the model of the damaged layer with a mosaic crystal layer and a single crystal layer with micro-cracks and dislocations. |
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