| dU/dt引发的MOSFET误导通分析 |
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| 引用本文： | 李典林,胡欣. dU/dt引发的MOSFET误导通分析[J]. 通信电源技术, 2006, 23(6): 39-42 |
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| 作者姓名： | 李典林 胡欣 |
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| 作者单位： | 电子科技大学微电子与固体电子学院,四川,成都,610054 |
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| 摘 要： | 分析了MOSFET误导通产生的原因,分别从原理和理论推导两个方面作了分析,主要考虑了开关管中寄生参数对开关特性的影响。通过求解误导通发生的条件,得到哪些参数会导致误触发,最后给出了仿真。文中还提出如何避免MOSFET误导通产生,以及改进方法,对减少实际应用中MOSFET破坏性损坏有一定意义。
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| 关 键 词： | dU/dt 误导通 MOSFET 寄生参数 |
| 文章编号： | 1009-3664（2006）06-0039-04 |
| 收稿时间： | 2006-05-11 |
| 修稿时间： | 2006-05-11 |
Analysis of dU/dt Induced Spurious-Trigger of MOSFET |
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| LI Dian-lin,HU Xin. Analysis of dU/dt Induced Spurious-Trigger of MOSFET[J]. Telecom Power Technologies, 2006, 23(6): 39-42 |
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| Authors: | LI Dian-lin HU Xin |
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| Affiliation: | Sch. of Microele.ctronics and Solid -State Electronics, Univ. of Electronic Science and Technology of China,Chengdu 610054,China |
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| Abstract: | This paper has introduced the cause of spurious-trigger of MOSFET,which may punch through the MOSFET,even brings catastrophic results.The analysis takes into account the main parasitic components of device,package and circuit.By deriving the critical state of spurious-trigger explains which parameter may have the erroneous trigger and how to avoid them,finally we give a simulation results which shows good agreement with the theoretical expressions. |
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| Keywords: | dU/dt erroneous trigger MOSFET main parasitic |
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