| AlGaInP红、橙、黄光高亮度LED外延材料 |
| |
| 引用本文： | 关兴国,严振斌,刘惠生,路红喜,李志强,李艾功. AlGaInP红、橙、黄光高亮度LED外延材料[J]. 微纳电子技术, 2000, 0(6) |
| |
| 作者姓名： | 关兴国 严振斌 刘惠生 路红喜 李志强 李艾功 |
| |
| 作者单位： | 河北汇能电力电子有限公司!河北石家庄050051 |
| |
| 摘 要： | 采用金属有机化合物汽相淀积技术生长用于高亮度发光管 (UB-L ED)的 Al Ga In P/Ga As半导体微结构材料 ,突破了材料结构设计和材料生长工艺的关键技术 ,生长出满足于 Cd级的红、橙、黄光 L ED器件的外延材料。
|
| 关 键 词： | 半导体 MOCVD 外延材料 发光管 |
AlGaInP epitaxial materials for high bright LED with red,orange and yellow color |
| |
| GUAN Xing-guo,YAN Zhen-bin,LIU Hui-sheng,LU Hong-xi,LI Zhi-qiang,LI Ai-gong. AlGaInP epitaxial materials for high bright LED with red,orange and yellow color[J]. Micronanoelectronic Technology, 2000, 0(6) |
| |
| Authors: | GUAN Xing-guo YAN Zhen-bin LIU Hui-sheng LU Hong-xi LI Zhi-qiang LI Ai-gong |
| |
| Abstract: | MOCVD growth and properties of AlGaInP/GaAs micro-structure materials for high bright LED are presented.It is shown that a detailed understanding of the structure design,misoriented substrates,DBR layer,GaP window layer and dopant incorporation is necessary to obtain high performance LED.The epitaxial materials with candela class output were successfully grown for red,orange and yellow LEDs. |
| |
| Keywords: | semiconductor MOCVD epitaxial materials LED |
| 本文献已被 CNKI 等数据库收录！ |
|
