Annealing behaviour of electron-beam deposited tin dioxide films |
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| Authors: | Arjeesh Gupta Poonam Gupta V K Srivastava |
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| Affiliation: | (1) Department of Physics, University of Roorkee, 247 672 Roorkee, India |
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| Abstract: | The sheet resistivity of tin dioxide films deposited by electron-beam evaporation has been studied during annealing, both as a function of time and temperature. The annealing behaviour of SnO2 films under the above two different conditions is consistent. A qualitative interpretation has been given for the decrease and the minimum observed in the resistivity. The increase in resistivity has been confirmed by scanning-electron micrographs. The films were also characterized by x-ray diffractometry. |
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| Keywords: | Tin dioxide films electron beam evaporation annealing behaviour sheet resistivity |
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