基于耦合腔的太赫兹垂直传输结构 |
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引用本文: | 王旭东,吕昕,程功.基于耦合腔的太赫兹垂直传输结构[J].红外与激光工程,2020,49(6):20190566-1-20190566-5. |
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作者姓名: | 王旭东 吕昕 程功 |
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作者单位: | 1.北京理工大学 信息与电子学院,北京 100081 |
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摘 要: | 提出了一种工作在110 GHz的耦合腔垂直传输结构。在垂直金属腔的两端对称地装配两个模式变换单元,作为波导的两个激励端口。模式变换单元在50 μm厚度石英基片上实现,该基片采用通孔结构和双面镀金工艺。因此,该垂直传输结构在太赫兹频段具有较低的插入损耗。仿真结果与测试结果拟合良好,模式变换单元的 S21仿真结果为?0.7 dB,测试结果小于?1.3 dB,在105~116 GHz带宽的反射系数低于?10 dB。
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关 键 词: | 太赫兹垂直传输 石英 耦合腔 |
收稿时间: | 2020-02-06 |
Terahertz vertical transition structure based on coupling cavity |
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Affiliation: | 1.School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, China2.Hebei Semiconductor Research Institute, Shijiazhuang 050051, China |
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Abstract: | The paper proposed a cavity-coupled vertical transition structure working at 110 GHz. Two mode-transition units were fabricated at ends of a vertical metal cavity symmetrically, acting as two excitation ports of a waveguide. The proposed mode-transition unit was realized on a 50-μm thick quartz-substrate with via holes and double-side patterned. In this way, the vertical transition structure presented a low insertion loss at terahertz frequency. Good agreement between simulated and measured results was obtained. The simulated S21 of the mode-transition unit was ?0.7 dB, the measured S21 was less than ?1.3 dB. The bandwidth from 105 GHz to 116 GHz was obtained for reflection level lower than ?10 dB. |
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