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Synthesis and memory characteristics of polyimides containing noncoplanar aryl pendant groups
Authors:Yueqin Li  Yueying Chu  Runchen Fang  Shijin Ding  Yulong Wang  Yingzhong Shen  Anmin Zheng
Affiliation:1. Applied Chemistry Department, School of Material Science & Engineering, Nanjing University of Aeronautics & Astronautics, 29 Yudao Street, Nanjing 210016, PR China;2. State Key Laboratory Magnetic Resonance and Atomic Molecular Physics, Wuhan Centre for Magnetic Resonance, Wuhan Institute of Physics and Mathematics, Chinese Academy of Science, Wuhan 430071, PR China;3. State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, PR China
Abstract:A series of soluble aromatic polyimides were prepared from 2,2′-diphenyl-4,4′-biphenyl diamine (DPBD), 2,2′-bis(biphenyl)-4,4′-biphenyl diamine (BBPBD), 2,2′-bis4-(naphthalen-1-yl)phenyl]-4,4′-biphenyl diamine (BNPBD) and 2,2′-bis(3,5-dimethoxyphenyl)-4,4′-biphenyl diamine (BMPBD) by polycondensation with 2,2′-bis4′-(3′′,4′′,5′′-trifluorophenyl)phenyl]-4,4′,5,5′-biphenyl tetracarboxylic dianhydride via a two-step procedure. The resulting polymers were fully characterized and they exhibited excellent organosolubility, high thermal and dimensional stability. Resistive switching devices with the configuration of Al/polymer/ITO were constructed from these polyimides by using conventional solution coating process. Devices with the active layer based on DPBD, BBPBD and BNPBD exhibited nonvolatile and rewritable flash type memory characteristics with the turn-on voltage at ?2.0 to ?3.0 V and the turn-off voltage at 2.0–3.0 V. Whereas, device based on BMPBD demonstrated a bipolar write-once read-many times (WORM) memory capability with the writing voltage around ±3.0 V. The ON/OFF current ratio of these devices was of about 106 and the retention times can be as long as 104 s.
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