基于传统的CMOS工艺延伸漏极NMOS功率管研究

延伸漏极N型MOS（EDNMOS）是基于传统低成本CMOS工艺设计制造，用N-well作为NMOS漏极漂移区，以提高其击穿电压。用二维器件模拟软件Medicici对该器件进行模拟分析，结果表明有效地提高了NMOS管击穿电压。实验结果表明采用这种结构能使低压CMOS工艺输出功率管耐压提高到电源电压的2．5倍，样管在5V栅压下输出的电流可达到750mA。作为开关管工作，对于1000pF容性负载，其工作电流在550mA时，工作频率可达500KHz。

Study of Extended Drain NMOS Fabricated with Conventional CMOS Technology

A new Extended Drain NMOSFET(EDNMOS),fabricated in a conventional low cost CMOS technology,using N-well as its drain drift region is designed and fabricated to improve its breakdown voltage.Simulation and analysis with 2-D Devices Simulator Medici~1] is carried out and the results show that the breakdown voltage can be effectively improved.Experiments indicate that the breakdown voltage of this EDNMOS can be increased to 2.5 times of supply voltage and the driving current can reach up to 750 mA under 5 V gate-source voltage.The sample transistor can switch at 500 kHz frequency with 550 mA working current,driving a capacitive load of 1 000 pF.