Characterization and Optimization of a Resonant Cavity Enhanced P-i-N Photodiode Response

This paper presents linear pulse response of a Resonant Cavity Enhanced (RCE) P-i-N fotodiode. The RCE P-i-N photodiode designed for high-speed aplication is analysed for various submicron thicknesses of absorption layer, bias voltages, active areas and incident pulse optical excitations. The results are obtained by numerical simulation of the complete phenomenological model for two valley semiconductor. Great enhancement of the quantum efficiency and the product bandwidth-quantum efficiency, is obvious from obtained results for this photodiode type.