calculations of p-type δ-doped quantum wells in Si

We present the hole subband structure calculation in single and double p-type δ-doped quantum wells in Si based on the 4×4 Luttinger–Kohn Hamiltonian. The valence band bending and the Γ hole states are calculated within the lines of the Thomas–Fermi–Dirac approximation and the effective mass theory at the Brillouin zone center. The obtained zone center eigenstates are then used to diagonalize the k·p Hamiltonian for non-zero k. The hole subband structure is analyzed as a function of the impurity density and the distance between δ wells. It is shown that the application of a 4×4 model to describe the hole ground state in single p-type δ-doped in Si can be misleading.