| N_2O等离子体处理对富硅氮化硅薄膜发光的影响 |
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| 引用本文： | 蔡文浩,黄建浩,李东升,杨德仁.N_2O等离子体处理对富硅氮化硅薄膜发光的影响[J].材料科学与工程学报,2009(1). |
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| 作者姓名： | 蔡文浩 黄建浩 李东升 杨德仁 |
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| 作者单位： | 浙江大学硅材料国家重点实验室;浙江大学材料科学与工程系; |
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| 基金项目： | “973计划”基金资助项目(2007CB613403);;教育部“长江学者和创新团队发展计划资助”项目(IRT0651) |
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| 摘 要： | 采用PECVD方法制备富硅氮化硅(SiNx)薄膜,并研究了N2O等离子体处理对SiNx薄膜光致发光(PL)及电致发光(EL)的影响。研究结果表明,N2O等离子体处理前后SiNx薄膜的PL发光峰均位于430nm处,且强度变化不大。而其EL发光峰位于600nm处,处理后强度有所提高。但经过高温热处理后,EL强度会大幅度降低。这主要是由于N2O等离子体处理在薄膜中引入N原子,这些N原子与Si原子结合,消除Si的悬挂键,降低了非辐射复合中心的浓度;而热处理后发生的原子重排,使得N原子与Si原子断开,进而与O原子结合,致使EL强度降低。
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| 关 键 词： | 富硅氮化硅 N2O等离子体 光致发光 电致发光 |
Effect of N_2O Plasma Treatment on Luminescence of Silicon-rich Silicon Nitride Films |
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| CAI Wen-hao,HUANG Jian-hao,LI Dong-sheng,YANG De-ren.Effect of N_2O Plasma Treatment on Luminescence of Silicon-rich Silicon Nitride Films[J].Journal of Materials Science and Engineering,2009(1). |
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| Authors: | CAI Wen-hao HUANG Jian-hao LI Dong-sheng YANG De-ren |
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| Affiliation: | State Key Laboratory of Silicon Materials and department of material science and engineering;Zhejiang University;Hangzhou 310027;China |
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| Abstract: | Silicon-rich silicon nitride(SRSN) films were deposited on p-type silicon substrates using a conventional PECVD system.After deposition,SRSN films were treated by N_2O plasma in the PECVD system.And MIS structure devices were fabricated using ITO as anode and a 300nm Al film as cathode.It was found that the N_2O plasma treatment enhanced the electroluminescence of the SRSN MIS devices.However,the enhanced EL would be decreased by high-temperature annealing.The enhanced EL was attributed to the decreasing of... |
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| Keywords: | silicon-rich silicon nitride N_2O plasma photoluminescence electroluminescence |
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