GaAlAs buried-heterostructure lasers grown by a two-step MOCVD process |
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| Authors: | Hong C.S. Kasemset D. Kim M.E. Milano R.A. |
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| Affiliation: | Rockwell International, Microelectronics Research & Development Center, Thousand Oaks, USA; |
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| Abstract: | The fabrication and characterisation of GaAlAs buried-heterostructure laser diodes having low threshold currents (10 mA), high uniformity and planar surface structure, and grown exclusively by metalorganic chemical vapour deposition (MOCVD) are described. Single-longitudinal and transverse-mode operation of these devices has been observed. In addition, considerable suppression of relaxation resonance effects has been observed in the high-frequency modulation of these devices. |
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