Nitride-based LEDs with 800/spl deg/C grown p-AlInGaN-GaN double-cap layers |
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Authors: | SJ Chang LW Wu YK Su YP Hsu WC Lai JM Tsai JK Sheu CT Lee |
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Affiliation: | Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan; |
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Abstract: | GaN-based light-emitting diodes (LEDs) with various p-cap layers were prepared. It was found that surface morphologies of the LEDs with 800/spl deg/C grown cap layers were rough due to the low lateral growth rate of GaN. It was also found that 20-mA forward voltage of the LED with 800/spl deg/C grown p-AlInGaN-GaN double-cap layer was only 3.05 V. Furthermore, it was found that we could achieve a high output power and a long lifetime by using the 800/spl deg/C grown p-AlInGaN-GaN double-cap layer. |
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