高取向低粗糙度金刚石薄膜生长的研究

目的研究热丝化学气相沉积(HFCVD)工艺对金刚石薄膜生长的影响,确定影响金刚石薄膜生长的因素。方法采用热丝CVD法,以丙酮为碳源,在不同晶面的Si衬底上沉积金刚石薄膜,通过金相显微镜、X射线衍射仪分析薄膜生长特性。结果不同沉积温度下生长的金刚石薄膜表面形貌差异很大。在高、低碳源浓度下分别获得了(400)和(111)晶面取向的金刚石薄膜。采用分步沉积法,改善了成膜的效率。结论气源浓度和生长温度是影响金刚石薄膜生长的重要因素,分步沉积法对于金刚石薄膜的生长有较大影响。

Growth of Highly-oriented and Low-roughness Diamond Thin Film

Objective To study the influences of hot-filament chemical vapor deposition technology on the growth of diamond thin films, and determine the influencing factors of diamond thin film growth. Methods The diamond thin films were deposited on different oriented Si substrates using acetone as the carbon source by hot filament chemical vapor deposition, and the growth characteristics were analyzed by metallographic microscopy and X-ray diffraction. Results Surface morphology differed greatly for diamond films grown at different deposition temperatures. High-quality (111)-orientation diamond films were achieved at low carbon concentration, and high-quality (400)-orientation diamond films were achieved at high carbon concentration. Efficiency of film growth was improved by the intermittent deposition method. Conclusion Gas source concentration and growth temperature were the important factors influencing the growth of diamond films, and intermittent deposition method had a relatively great effect on the growth of diamond films.