单晶金刚石晶体的机械研磨

为研究单晶金刚石晶体机械研磨过程中表层材料的去除机理，首先从理论上分析了单晶金刚石晶体在机械研磨过程中表层材料发生塑性变形的临界条件，并利用原子力显微镜对研磨后的（110）晶面和（100）晶面进行观测，发现两个晶面沿易磨方向〈100〉和难磨方向〈110〉研磨时的研磨表面都存在塑性变形后的纳米沟槽，表明表层材料实现了望性方式去除，但在相同的晶面和扫描范围内，沿易磨方向研磨的表面塑性沟槽数目少，表面波纹明显；而难磨方向的研磨表面塑性沟槽数目多，所获得的表面粗糙度低，对（110）晶面和（100）晶面各个研磨方向的最大塑性沟槽深度比较的结果表明，两个晶面的最大塑性沟槽深度具有显著的各向异性。

Mechanical lapping single crystal diamond

The critical condition for plastic deformation of lapped surface layer in mechanical lapping single crystal diamond is analyzed in theory firstly. And also, the lapped surfaces are observed by atomic force microscope (AFM). The AFM topographies reveal that all the surfaces lapped in the <100> and <110> directions on the named (110) and (100) planes consist of plastic grooves in nanometric scale, which indicates the lapped surface layer can be removed in plastic mode. However, within the same AFM scanning area and on the same crystal plane, the groove number lapped in the <100> direction is smaller than that lapped in the <110> direction, but the former groove width and surface waviness are larger than that of the later. So the surface roughness lapped in the <110> direction is smaller. At last, the maximal groove depths lapped in different lapping directions on the (110) plane and (100) plane are compared with each other. The results show that either the (110) plane or the (100) plane has strong anisotropy in the maximal groove depth.