| 硅基量子点器件 |
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| 引用本文： | 王亚东 叶志镇. 硅基量子点器件[J]. 半导体杂志, 2000, 25(3): 50-55 |
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| 作者姓名： | 王亚东 叶志镇 |
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| 作者单位： | 浙江大学硅材料国家重点实验室!杭州310027 |
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| 摘 要： | 硅基量子点器件由于其独特的性能以及和硅集成电路相容的特点成为研究的重点。量子点中电子和空穴强的量子限制作用使其表现出一些新颖的物理性能，从而在微电子和光电子器件方面有着重要的应用价值。本文介绍了硅基量子点器件的一些应用，包括单电子晶体管、红外探测器、发光二极管。
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| 关 键 词： | 硅基量子点器件 光电子器件 硅集成电路 |
Silicon-based Quantum Dot Devices |
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| WANG Ya-dong YE Zhi-zhen HUANG Jing-yun. Silicon-based Quantum Dot Devices[J]. , 2000, 25(3): 50-55 |
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| Authors: | WANG Ya-dong YE Zhi-zhen HUANG Jing-yun |
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| Abstract: | There is currently a major ongoing research effort about Silicon-based quantum dot devices because of their unique properties and compatible with matur e Si integrated circuit. Due to strong confinement effects of electrons and hole s, QDs exhibit novel physical properties leading to important applications in mi croelectronics and optoelectronics. This paper introduces the applications of Si licon-based quantum dot devices, including Si single-electron quantum-dot transi stor, Ge/Si infrared photodetector and SiGe quantum dot LED. |
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| Keywords: | Si-based quantum dot devices confinement effects opto electronics |
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