Q-switched semiconductor diode lasers

Diode lasers with an intracavity electroabsorption modulator have been operated with full on/off modulation at rates of 3 GHz. In addition, modulation of the lasers has been shown up to a detector-limited frequency of 6 GHz. A new model of these devices, which includes amplified spontaneous emission and high gain is developed in this paper. A quasi-static gain approximation is introduced and the dynamics of the electron and photon population are modeled by three coupled nonlinear difference equations which can be numerically solved with very little computation time. The model predicts the possibility of a new mode ofQ-switched operation with the capacity for repetition rates of tens of gigahertz and binary pulse position modulation at rates of the order of 10 Gbits/s.