A polar modulator transmitter for GSM/EDGE |
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| Authors: | Elliott MR Montalvo T Jeffries BP Murden F Strange J Hill A Nandipaku S Harrebek J |
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| Affiliation: | Analog Devices Inc., Greensboro, NC, USA; |
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| Abstract: | This 0.5-/spl mu/m SiGe BiCMOS polar modulator IC adds EDGE transmit capability to a GSM transceiver IC without any RF filters. Envelope information is extracted from the transmit IF and applied to the phase-modulated carrier in an RF variable gain amplifier which follows the integrated transmit VCO. The dual-band IC supports all four GSM bands. In EDGE mode, the IC produces more than 1 dBm of output power with more than 6 dB of margin to the transmit spectrum mask and less than 3% rms phase error. In GSM mode, more than 7 dBm of output power is produced with noise in the receive band less than -164 dBc/Hz. |
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